d ata sheet buy25cs12k - 01 ifag pmm r fs d hir 1 of 8 march 2015 hirel radhard power - mos ? low r ds(on) ? single event effect (see) hardened let 85, range: 118m let 55, range: 90m v gs = - 10v, v ds = 250v v gs = - 15v, v ds = 250v v gs = - 15v, v ds = 120v v gs = - 20v, v ds = 160v ? total ionisation dose (tid) hardened 1 0 0 krad approved (level r) ? he rmetically sealed ? n - channel type marking pin configuration 1 2 3 4 package buy25cs12k - 01 - d s g not connected to - 257aa b uy25cs 12 k - 1 1 - g d s not connected to - 257 aa maximum ratings parameter symbol values unit drain source voltage v ds 250 v gate source voltage v gs +/ - 20 v drain gate voltage v dg 250 v continuous d rai n c urrent t c = 25 c t c = 100 c i d 12 .4 8 a continuous source current i s 12 .4 a d rain c urrent pulsed , t p limited by t jmax i dm 50 apk total power dissipation 1) p tot 75 w junction temperature t j - 55 to + 150 c operating and storage temperature t op - 55 to + 150 c avalanche energy e as 60 mj thermal characteristics thermal resistance (junction to case) r th jc 1 . 66 k/ w soldering temperature t sol 25 0 c notes.: 1) for t s 25c. for t s > 25c derating is required . 1 3 2 4
d ata sheet buy25cs12k - 01 ifag pmm r fs d hir 2 of 8 march 2015 electrical characteristics , at t a =25c; unless otherwise specified parameter symbol values unit min. max. dc characteristics breakdown voltage drain to source i d = 0.25ma, v gs = 0v b vdss 250 - v gate threshold voltage i d = 1.0ma, v ds v gs v gs(th) 2.0 4.0 v gate to source leakage current v ds = 0v, v g s = +/ - 20v i gss - +/ - 100 na drain current v ds = 20 0v, v g s = 0v i d ss - 25 a drain source on resistance 1) v gs = 10v, i d = 8a r ds(on) - 0.1 3 source drain diode, forward voltage 1) , 2) v gs = 0 v, i s = 12 .4 a v sd - 1 . 2 v ac characteristics turn - on delay time v dd = 5 0 % v d s , i d = 8 a, r g = 4.7 t d(on) - 25 n s rise time v dd = 5 0 % v d s , i d = 8 a, r g = 4.7 t r - 25 n s turn - off delay time v dd = 5 0 % v d s , i d = 8 a, r g = 4.7 t d(off) - 35 n s fall time v dd = 5 0 % v d s , i d = 8 a, r g = 4.7 t f - 20 n s reverse recovery time v dd < 5 0 % v d s , i d = 12.4 a t rr - 400 ns common source input capacitance v ds = 100 v, v gs = 0v, f = 1.0mhz c iss 1.3 1.9 n f common source out put capacitance v ds = 100 v, v gs = 0v, f = 1.0mhz c o ss 90 150 pf common source reverse transfer capacitance v ds = 100 v, v gs = 0v, f = 1.0mhz c r ss 1 6 pf total gate charge v dd = 5 0 % v d s , v gs = 10v , i d = 12. 4 a q g - 42 nc notes.: 1) pulsed measurement: pulse width < 300s, duty cycle <2.0% . 2) measured within 2.0 mm of case.
d ata sheet buy25cs12k - 01 ifag pmm r fs d hir 3 of 8 march 2015 electrical characteristics at t a = 1 2 5c; unless otherwise specified parameter symbol values unit min. max. dc characteristics gate threshold voltage i d = 1.0ma, v ds gs v gs(th) 1.5 - v gate to source leakage current v ds = 0v, v g s = +/ - 20v i gss - +/ - 2 00 na drain current v ds = 20 0v, v g s = 0v i d ss - 250 a drain source on resistance 1) v gs = 10v, i d = 8a r ds(on) - 0. 3 notes.: 1) pulsed measurement: pulse width < 300s, duty cycle <2.0% . electrical characteristics at t a = - 5 5 c; unless otherwise specified parameter symbol values unit min. max. dc characteristics gate threshold voltage i d = 1.0ma, v ds gs v gs(th) - 5.0 v
d ata sheet buy25cs12k - 01 ifag pmm r fs d hir 4 of 8 march 2015 1 safe operating area i d = f(v ds ); t c = 25c parameter: t p 2 max. transient thermal impedance z thjc = f(t p ) parameter: d = t p /t
d ata sheet buy25cs12k - 01 ifag pmm r fs d hir 5 of 8 march 2015 3 typ. output characteristics i d = f(v ds ); t j = 25 c parameter: v gs 4 typ. output characteristics i d = f(v ds ); t j = 150 c parameter: v g 5 typ. drain - source on - state resistance r ds(on) = f(i d ); t j = 150 c parameter: v gs 6 typ. drain - source on - state resistance r ds(on) = f(t j ) i d =8 a
d ata sheet buy25cs12k - 01 ifag pmm r fs d hir 6 of 8 march 2015 7 typ. transfer characteristics i d = f(v gs ); |vds| > 2 |i d | r ds(on)max parameter: t j 8 typ. gate threshold voltage i d =f(t j ) i d = 1ma 9 typ. forward characteristics of reverse diode i f = f(v sd ) parameter: t j 10 typ. drain - source breakdown voltage bv dss = f(t j ) i d = 250a
d ata sheet buy25cs12k - 01 ifag pmm r fs d hir 7 of 8 march 2015 11 typ. capacitances c = f(v ds ); v gs = 0 v; f = 1 mhz 12 typ. gate charge v gs = f(q gate ); id = 12.4 a pulsed parameter: v dd
d ata sheet buy25cs12k - 01 ifag pmm r fs d hir 8 of 8 march 2015 to - 257aa package caution this package contains beryllia. therefore it must not be in any form machined, grinded, sanded, polished or any other mechanical operation which will produce dust and particles . attention please! the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (beschaffenheitsgarantie). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologie s hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non - infringement of intellectual property rights of a third party. information for further information on technology, delivery terms and cond itions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in ques tion please contact your nearest infineon technologies office. infineon technologies components may only be used in life - support devices or systems with the express ed written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life - support device or system, or to affect the safety or effectiveness of that device or system. life support devices or sy stems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. edition 20 1 5 - 0 3 published by infineon technologie s ag 85579 neubiberg , germany ? infineon technologies ag 201 5 all rights reserved. dimensions are typical [mm] 1 6 . 0 1 0 . 6 1 6 . 5 5 . 1 1 . 0 3 . 6 [ 2 . 54 ] [ 2 . 54 ] 10 . 6 0 . 8 3 . 0 1 3 . 5 1 3 2
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